• DocumentCode
    3377768
  • Title

    Peak current reduction by simultaneous state replication and re-encoding

  • Author

    Gu, Junjun ; Qu, Gang ; Yuan, Lin ; Zhou, Qiang

  • Author_Institution
    Univ. of Maryland, College Park, MD, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    592
  • Lastpage
    595
  • Abstract
    Peak current is one of the important considerations for circuit design and testing in the deep sub-micron technology. In a synchronous finite state machine (FSM), it is observed that the peak current happens at the moment of state transitions and it has a strong correlation with the maximum number of state registers switching in the same direction simultaneously [2], which we refer to as the peak switching value (PSV). We propose a FSM synthesis method to reduce P SV by seamlessly combining state replication and state re-encoding techniques. Our experiments show that out of 52 FSM benchmarks encoded by a state-of-the-art power-driven encoding algorithm POW3 [1], 36 of them are not optimal in terms of PSV. Our approach can improve on 34 of them with an average 39.2% PSV reduction, while the only comparable PSV-driven FSM synthesis technique [2] can improve on 27 benchmarks with an average 24.5% reduction. Furthermore, we compare our approach with [2] after the FSMs are implemented using an industry EDA tool. The results show that our approach reduces the peak current in the circuits by 13% on average and the total power by 3% with a mere 2% overhead in area.
  • Keywords
    encoding; finite state machines; synchronous machines; deep submicron technology; peak current reduction; power-driven encoding algorithm; reencoding; state transition moment; synchronous finite state machine; Benchmark testing; Encoding; Optimized production technology; Registers; Sequential circuits; Strontium; Switches; finite state machine; low power; peak current; state encoding; state replication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2010 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    978-1-4244-8193-4
  • Type

    conf

  • DOI
    10.1109/ICCAD.2010.5654204
  • Filename
    5654204