Material parameter sensitivity study on CIGS solar cell performance

A numerical simulation of the performance of CIGS solar cells has been carried out using the AMPS-1D device simulation program to study the sensitivity of cell performance (efficiency, photo-J-V, and QE characteristics) on material parameters. The simulation results suggest that the carrier mobility, recombination center density, and carrier density in the CdS and CIGS absorber layers most influence the cell performance. In both CdS and CIGS absorber layers, the electron mobility has stronger impact than hole mobility on the cell performance. The defect density in the CIGS absorber is more sensitive than defect density in the CdS. The recombination center density in the CIGS absorber affects all device performance parameters. The calculations suggest that the thickness of the i-ZnO layer primarily affects open circuit voltage and fill factor.