DocumentCode
3378131
Title
Nanoscale Al-Al and Cu-Cu Contacts
Author
Liu, Qingquan ; McCormick, Daniel T. ; Roberts, Robert C. ; Tien, Norman C.
Author_Institution
Case Western Reserve Univ., Cleveland
fYear
2007
fDate
10-14 June 2007
Firstpage
1593
Lastpage
1596
Abstract
This paper reports that the forces needed to break Al and Cu native oxide are 0 to 3 muN, and 0 to 0.5 muN, respectively, remarkably less than the previously reported 0.1 N force requirement of breaking Al native oxide. Our modeling and experimental results indicate that nanoscale contact resistance is dominated by local hardening instead of contact force as in conventional contact theories. A microswitch featuring a 60 to 80 nm thick contact electrode is fabricated to demonstrate nanoscale Al contacts.
Keywords
contact resistance; hardening; microelectrodes; microswitches; nanocontacts; Al; Cu; contact electrode fabrication; local hardening; microswitch; nanoscale contact resistance; native oxide layer; Actuators; CMOS technology; Contact resistance; Deformable models; Electrodes; Heat transfer; Microswitches; Semiconductor device modeling; Solid modeling; Temperature; Al; Contact resistance; Cu; MEMS switch; NEMS; asperity; nanoscale; native oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location
Lyon
Print_ISBN
1-4244-0842-3
Electronic_ISBN
1-4244-0842-3
Type
conf
DOI
10.1109/SENSOR.2007.4300452
Filename
4300452
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