• DocumentCode
    3378131
  • Title

    Nanoscale Al-Al and Cu-Cu Contacts

  • Author

    Liu, Qingquan ; McCormick, Daniel T. ; Roberts, Robert C. ; Tien, Norman C.

  • Author_Institution
    Case Western Reserve Univ., Cleveland
  • fYear
    2007
  • fDate
    10-14 June 2007
  • Firstpage
    1593
  • Lastpage
    1596
  • Abstract
    This paper reports that the forces needed to break Al and Cu native oxide are 0 to 3 muN, and 0 to 0.5 muN, respectively, remarkably less than the previously reported 0.1 N force requirement of breaking Al native oxide. Our modeling and experimental results indicate that nanoscale contact resistance is dominated by local hardening instead of contact force as in conventional contact theories. A microswitch featuring a 60 to 80 nm thick contact electrode is fabricated to demonstrate nanoscale Al contacts.
  • Keywords
    contact resistance; hardening; microelectrodes; microswitches; nanocontacts; Al; Cu; contact electrode fabrication; local hardening; microswitch; nanoscale contact resistance; native oxide layer; Actuators; CMOS technology; Contact resistance; Deformable models; Electrodes; Heat transfer; Microswitches; Semiconductor device modeling; Solid modeling; Temperature; Al; Contact resistance; Cu; MEMS switch; NEMS; asperity; nanoscale; native oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
  • Conference_Location
    Lyon
  • Print_ISBN
    1-4244-0842-3
  • Electronic_ISBN
    1-4244-0842-3
  • Type

    conf

  • DOI
    10.1109/SENSOR.2007.4300452
  • Filename
    4300452