Title :
Influence of submicron LDD-MOSFET charge effect on low power circuits
Author :
Klein, P. ; Hoffmann, K.
Author_Institution :
Bundeswehr Munich Univ., Neubiberg, Germany
fDate :
31 May-2 Jun 1995
Abstract :
This model includes additional charge effects around the threshold voltage as well as a bias dependent charge description of the LDD(S)-region. If not taken into account in submicron MOSFET models, simulation errors of e.g. up to 50% in the frequency of 0.3 μm CMOS ring oscillators or over 90% in the 3 dB frequency of a folded cascode amplifier may occur
Keywords :
CMOS analogue integrated circuits; MOSFET; MOSFET circuits; semiconductor device models; space charge; 0.3 micron; CMOS ring oscillator; charge effect; folded cascode amplifier; low power circuit; model; simulation; submicron LDD-MOSFET; threshold voltage; Capacitance measurement; Circuit simulation; Energy consumption; Frequency; MOSFET circuits; Power supplies; Ring oscillators; Semiconductor device modeling; Subthreshold current; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-2773-X
DOI :
10.1109/VTSA.1995.524704
