DocumentCode :
3378168
Title :
Modeling of top amorphous cell in four-terminal configuration with poly-silicon solar cell on the base of I-V-C and QE research
Author :
Kolodziej, Michal ; Krewniak, Pawel ; Baranowski, Witold ; Kolodziej, Michal
Author_Institution :
AGH University of Science and Technology, Krak?w, Poland
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
6
Abstract :
The investigation of top amorphous cells in four-terminal configuration with bottom polycrystalline silicon cell was carried out. The top structures were made at low pressure as well as in multistep hydrogen conditions by Capacitatively Coupled Radio Frequency (13.56 MHz) Plasma Enhancement Chemical Vapor Deposition (RF PECVD) on a glass plate and a foil as well as on a polysilicon structure. However, the authors focused on fabrication of protocrystalline solar cells with 6–8% efficiency and on their properties among others studied by analysis of defect states of intrinsic layer. Finally a selection of the thickness with respect to the current and optical matching with the bottom cell is made.
Keywords :
Amorphous materials; Chemical vapor deposition; Glass; Hydrogen; Optical device fabrication; Photovoltaic cells; Plasma chemistry; Plasma properties; Radio frequency; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922563
Filename :
4922563
Link To Document :
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