DocumentCode
3378228
Title
Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET
Author
Moghadam, H.A. ; Mahabadi, S. E. Jamali ; Rajabi, Saba
Author_Institution
Dept. of Electr. Eng., Islamic Azad Univ., Bojnourd, Iran
fYear
2011
fDate
21-22 July 2011
Firstpage
172
Lastpage
173
Abstract
In this paper we propose for the first time a novel 4H-SiC MOSFET in order to increase breakdown voltage. Key idea in this work is to utilize better reduced surface field (RESURF) by combination the good features of a buried gate MESFET with a conventional MOSFET. Therefore proposed structure is called MES-MOSFET structure. The simulation results show that breakdown voltage can be enhanced about 3.7 times compared to conventional structure.
Keywords
Schottky gate field effect transistors; power MOSFET; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; MES-MOSFET structure; RESURF; SiC; breakdown voltage; buried gate MESFET; high voltage MOSFET; reduced surface field; Analytical models; Logic gates; MESFETs; Power MOSFET; Reliability; High voltage; MESFET; MOSFET; RESURF;
fLanguage
English
Publisher
ieee
Conference_Titel
Signal Processing, Communication, Computing and Networking Technologies (ICSCCN), 2011 International Conference on
Conference_Location
Thuckafay
Print_ISBN
978-1-61284-654-5
Type
conf
DOI
10.1109/ICSCCN.2011.6024537
Filename
6024537
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