DocumentCode :
3378234
Title :
Characterization and improvements of flash EEPROM endurance performance by integrating optimized process modules in advanced flash technology
Author :
Shone, F. ; Chang, A. ; Chen, T. ; Wu, S. ; Peng, N. ; Onishi, K. ; Takeuchi, N. ; Yiu, T.
Author_Institution :
Macronix Int. Co., Hsinchu, Taiwan
fYear :
1995
fDate :
31 May-2 Jun 1995
Firstpage :
314
Lastpage :
316
Abstract :
The effects of process modules of tunnel oxide, barrier metal, and passivation films on the endurance performance of flash EEPROM devices have been extensively characterized. It is found that dilute wet O2 +N2O anneal for tunnel oxide, Ti/TiN as barrier metals, and SOG as interlayer passivation can greatly improve endurance performance and greatly reduce Gm degradation
Keywords :
CMOS memory circuits; EPROM; annealing; diffusion barriers; integrated circuit technology; passivation; N2O; O2; SOG interlayer passivation film; Ti-TiN; barrier metal; dilute wet anneal; endurance; flash EEPROM; optimized process modules; transconductance; tunnel oxide; Annealing; Capacitors; Degradation; EPROM; Electric breakdown; Large scale integration; Nonvolatile memory; Passivation; Semiconductor films; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
ISSN :
1524-766X
Print_ISBN :
0-7803-2773-X
Type :
conf
DOI :
10.1109/VTSA.1995.524710
Filename :
524710
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3378234
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