• DocumentCode
    3378234
  • Title

    Characterization and improvements of flash EEPROM endurance performance by integrating optimized process modules in advanced flash technology

  • Author

    Shone, F. ; Chang, A. ; Chen, T. ; Wu, S. ; Peng, N. ; Onishi, K. ; Takeuchi, N. ; Yiu, T.

  • Author_Institution
    Macronix Int. Co., Hsinchu, Taiwan
  • fYear
    1995
  • fDate
    31 May-2 Jun 1995
  • Firstpage
    314
  • Lastpage
    316
  • Abstract
    The effects of process modules of tunnel oxide, barrier metal, and passivation films on the endurance performance of flash EEPROM devices have been extensively characterized. It is found that dilute wet O2 +N2O anneal for tunnel oxide, Ti/TiN as barrier metals, and SOG as interlayer passivation can greatly improve endurance performance and greatly reduce Gm degradation
  • Keywords
    CMOS memory circuits; EPROM; annealing; diffusion barriers; integrated circuit technology; passivation; N2O; O2; SOG interlayer passivation film; Ti-TiN; barrier metal; dilute wet anneal; endurance; flash EEPROM; optimized process modules; transconductance; tunnel oxide; Annealing; Capacitors; Degradation; EPROM; Electric breakdown; Large scale integration; Nonvolatile memory; Passivation; Semiconductor films; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-2773-X
  • Type

    conf

  • DOI
    10.1109/VTSA.1995.524710
  • Filename
    524710
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3378234