A new observation on initial charge loss in EPROM

Author

Shen, Shih-Jier ; Wei, Chih-Shih ; Hsu, Charles Ching-Hsiang

Author_Institution

Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

317

Lastpage

320

Abstract

In this paper, a new observation on the charge loss in an EPROM is reported. We found that the charge loss characteristics in an EPROM can be divided into two phases. The first phase is dominated by the charge transport in the interpoly dielectric and the second phase by the thermionic electron emission from the floating gate. Due to the fast charge loss rate, the charge loss in the first phase governs the threshold stability of the EPROM device. Based on the relationship between the first phase charge loss and the initial programmed charges, a method to determine the programming window for better threshold voltage stability is proposed

Keywords

EPROM; thermionic electron emission; EPROM; charge loss; charge transport; floating gate; interpoly dielectric; programming window; thermionic electron emission; threshold voltage stability; Dielectrics; EPROM; Microelectronics; Nonvolatile memory; Oxidation; Paramagnetic resonance; Pulp manufacturing; Stability; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-2773-X

Type

conf

DOI

10.1109/VTSA.1995.524711

Filename

524711