DocumentCode :
3378315
Title :
Monte Carlo simulations of carrier transport in AlGaInP laser diodes
Author :
Crow, G.C. ; Abram, R.A.
Author_Institution :
Dept. of Phys., Durham Univ., UK
fYear :
1996
fDate :
13-18 Oct. 1996
Firstpage :
35
Lastpage :
36
Abstract :
A self-consistent ensemble Monte Carlo simulation of charge transport in AlGaInP multiple quantum well lasers has been devised in an effort to understand why the light output from these lasers is reduced at high temperatures.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; electron-hole recombination; gallium compounds; quantum well lasers; semiconductor device models; AlGaInP; AlGaInP laser diodes; AlGaInP multiple quantum well lasers; Monte Carlo simulations; carrier transport; high temperatures; light output; self-consistent ensemble Monte Carlo simulation; Carrier confinement; Charge carrier processes; Diode lasers; Electron emission; Electron optics; Laser modes; Optical scattering; Quantum well lasers; Stimulated emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
Type :
conf
DOI :
10.1109/ISLC.1996.553736
Filename :
553736
Link To Document :
بازگشت