Crystallization of large grain polycrystalline silicon films on glass substrate induced by nano aluminum film at a low temperature of 350°C

In this paper, large grain polycrystalline silicon films on glass substrates have been fabricated at a low temperature of 350°C. The amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor (PECVD) were transformed to polysilicon films by using nano-aluminum induced crystallization (AIC) at a low temperature. Effect of the annealing time on the grain size and crystalline phase were discussed. The polycrystalline silicon films were characterized by using XRD, Raman and SEM. The surface morphology, sheet resistance and the crystallization mechanism were also discussed. Polycrystalline silicon films with grain sizes larger than 3 microns were obtained in this study at 350°C.