DocumentCode :
3378378
Title :
Effects of stress-induced mismatches on CMOS analog circuits
Author :
Jaeger, Richard C. ; Ramani, Ramanathan ; Suling, J.C.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fYear :
1995
fDate :
31 May-2 Jun 1995
Firstpage :
354
Lastpage :
360
Abstract :
Degradation of element matching in CMOS analog circuits due to piezoresistive effects is discussed. The piezoresistive behavior of resistors is reviewed, and the response of CMOS devices to die stress is compared to the variation of resistors in CMOS technology. Theory and experimental results for stress induced changes in device parameters, matching in differential pairs and current mirrors and the offset voltage of CMOS op-amps are presented. General layout considerations for minimizing the response of CMOS analog circuits to die stress are discussed
Keywords :
CMOS analogue integrated circuits; carrier mobility; integrated circuit layout; piezoresistance; CMOS analog circuits; current mirrors; die stress; differential pair matching; layout; offset voltage; op-amps; piezoresistive effects; stress-induced mismatches; Analog circuits; CMOS analog integrated circuits; CMOS technology; Degradation; Mirrors; Operational amplifiers; Piezoresistance; Resistors; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
ISSN :
1524-766X
Print_ISBN :
0-7803-2773-X
Type :
conf
DOI :
10.1109/VTSA.1995.524719
Filename :
524719
Link To Document :
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