Title :
Multi-terminal dual junction InGaP2/GaAs solar cells for hybrid system
Author :
Gray, Allen L. ; Stan, Mark ; Varghese, Tansen ; Korostyshevsky, Aaron ; Doman, John ; Sandoval, Annette ; Hills, Jenifer ; Grieg, Cora ; Turner, Michele ; Sharps, Paul ; Haas, Alex ; Wilcox, John ; Gray, Jeffery ; Schwartz, Richard
Author_Institution :
Emcore Photovoltaics, 10420 Research Rd SE, Albuquerque, NM 87123, USA
Abstract :
The performance of two and three-terminal solar cells under 13-sun AM1.5G illumination is reported. The solar cells are comprised of monolithically grown InGaP2 and GaAs single junction cells. The two-terminal device consists of single junctions in series. The three-terminal device structure comprises the single junctions independently interconnected by an InGaP2 layer serving as the middle contact. Device optimization was based on modeling of the InGaP2 top junction band gap for various spectral irradiance profiles. It was found that the optimal band gap combination for a 2.6eV filtered AM1.5G spectrum is achieved with 1.84eV and 1.43 eV for the top and bottom junctions, respectively. External quantum efficiency and illuminated current-voltage (I–V) measurements of the component two and three-terminal tandem cells are discussed.
Keywords :
Conducting materials; Conductivity; Crystalline materials; Gallium arsenide; Hybrid junctions; Lighting; Optical filters; Photonic band gap; Photovoltaic cells; Sheet materials;
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2008.4922575
