Multi-terminal dual junction InGaP2/GaAs solar cells for hybrid system

Author

Gray, Allen L. ; Stan, Mark ; Varghese, Tansen ; Korostyshevsky, Aaron ; Doman, John ; Sandoval, Annette ; Hills, Jenifer ; Grieg, Cora ; Turner, Michele ; Sharps, Paul ; Haas, Alex ; Wilcox, John ; Gray, Jeffery ; Schwartz, Richard

Author_Institution

Emcore Photovoltaics, 10420 Research Rd SE, Albuquerque, NM 87123, USA

fYear

2008

fDate

11-16 May 2008

Firstpage

1

Lastpage

4

Abstract

The performance of two and three-terminal solar cells under 13-sun AM1.5G illumination is reported. The solar cells are comprised of monolithically grown InGaP2 and GaAs single junction cells. The two-terminal device consists of single junctions in series. The three-terminal device structure comprises the single junctions independently interconnected by an InGaP2 layer serving as the middle contact. Device optimization was based on modeling of the InGaP2 top junction band gap for various spectral irradiance profiles. It was found that the optimal band gap combination for a 2.6eV filtered AM1.5G spectrum is achieved with 1.84eV and 1.43 eV for the top and bottom junctions, respectively. External quantum efficiency and illuminated current-voltage (I–V) measurements of the component two and three-terminal tandem cells are discussed.

Keywords

Conducting materials; Conductivity; Crystalline materials; Gallium arsenide; Hybrid junctions; Lighting; Optical filters; Photonic band gap; Photovoltaic cells; Sheet materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE

Conference_Location

San Diego, CA, USA

ISSN

0160-8371

Print_ISBN

978-1-4244-1640-0

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2008.4922575

Filename

4922575