DocumentCode :
3378389
Title :
Silicon-chip single and coupled coplanar transmission line measurements and model verification up to 50GHz
Author :
Goren, David ; Shlafman, Shlomo ; Sheinman, Benny ; Woods, Wayne ; Rascoe, Jay
Author_Institution :
IBM Haifa Res. Labs, Haifa Univ., Haifa
fYear :
2007
fDate :
13-16 May 2007
Firstpage :
21
Lastpage :
24
Abstract :
Silicon technology on-chip single and coupled coplanar transmission lines have been measured on wafer up to 50 GHz. De-embedding was performed using various methods including the L-2L technique [1,2] by measuring two transmission lines of original and double length. A novel approach has been used for the measurement of the coupled structures using conventional two port VNA. Results are investigated both in S-parameter format and in gamma-Zo format, and compared with EM solver and the parametric IBM coplanar T-line device models discussed elsewhere [3,4] which are available in IBM CMOS and SiGe technology design kits. A comparison with RC model shows the limits of RC model validity, in frequency domain.
Keywords :
CMOS digital integrated circuits; Ge-Si alloys; S-parameters; coplanar transmission lines; coupled transmission lines; silicon; system-on-chip; CMOS technology; S-parameter format; coupled coplanar transmission line measurements; frequency 50 GHz; parametric IBM coplanar T-line device models; silicon-chip single coplanar transmission line measurements; CMOS technology; Coplanar transmission lines; Couplings; Germanium silicon alloys; Length measurement; Performance evaluation; Scattering parameters; Semiconductor device modeling; Silicon germanium; Transmission line measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signal Propagation on Interconnects, 2007. SPI 2007. IEEE Workshop on
Conference_Location :
Genova
Print_ISBN :
978-1-4244-1223-5
Electronic_ISBN :
978-1-4244-1224-2
Type :
conf
DOI :
10.1109/SPI.2007.4512198
Filename :
4512198
Link To Document :
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