DocumentCode :
3378473
Title :
Oxide confinement: A revolution in VCSEL technology
Author :
Deppe, Dennis G. ; Huffaker, D.L. ; Oh, T.H.
Author_Institution :
Microelectrotiics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin
Volume :
11
fYear :
1997
fDate :
18-23 May 1997
Firstpage :
193
Lastpage :
193
Keywords :
Apertures; Distributed Bragg reflectors; Electrons; Gallium arsenide; Indium gallium arsenide; Laser modes; Microelectronics; Semiconductor laser arrays; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
Type :
conf
DOI :
10.1109/CLEO.1997.602455
Filename :
602455
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3378473
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