Title :
Low-frequency noise in lattice-matched In0.52Al0.48 As/In0.53Ga0.47As/InP HEMTs
Author :
Ren, L. ; Py, M.A. ; Spicher, J. ; Buehlmann, H.J. ; Beck, M. ; Ilegems, M.
Author_Institution :
Inst. of Micro and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
Abstract :
Low-frequency drain-current noise in lattice-matched InAlAs/InGaAs/InP HEMTs has been studied at low drain bias in a temperature range of 77 to 350 K. The 1/f noise was found to be strongly dependent on gate-source bias, which can be interpreted by taking into account the role played by the series resistance. The Hooge´s parameters for 1/f noise were extracted to be 1.5×10-3 for the InGaAs channel and 7×10-4 for the series resistance. Noise spectra analysis reveals two generation-recombination (G-R) noise components, which correspond to two traps with activation energies of 0.56 eV and 0.11 eV. Considering their different behavior upon gate-source bias and the DLTS results, we conclude that the 0.11 eV trap is located in the channel region while the 0.56 eV trap is most likely located in the Schottky barrier layer
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; deep level transient spectroscopy; electron-hole recombination; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; microwave measurement; semiconductor device noise; 0.11 eV; 0.56 eV; 1/f noise; 77 to 350 K; DLTS; Hooge´s parameters; III-V semiconductors; In0.52Al0.48As-In0.53Ga0.47 As-InP; Schottky barrier layer; activation energies; channel region; drain bias; drain-current noise; gate-source bias; generation-recombination noise components; lattice-matched HEMTs; low-frequency noise; noise spectra analysis; series resistance; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-frequency noise; MODFETs; Noise generators; Schottky barriers; Temperature dependence; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492258
