DocumentCode :
3378558
Title :
Design method and test structure to characterize and repair TSV defect induced signal degradation in 3D system
Author :
Cho, Minki ; Liu, Chang ; Kim, Dae Hyun ; Lim, Sung Kyu ; Mukhopadhyay, Saibal
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
694
Lastpage :
697
Abstract :
In this paper we present a test structure and design methodology for testing, characterization, and self-repair of TSVs in 3D ICs. The proposed structure can detect the signal degradation through TSVs due to resistive shorts and variations in TSV. For TSVs with moderate signal degradations, the proposed structure reconfigures itself as signal recovery circuit to improve signal fidelity. The paper presents the design of the test/recovery structure, the test methodologies, and demonstrates its effectiveness through stand alone simulations as well as in a full-chip physical design of a 3D IC.
Keywords :
integrated circuit design; integrated circuit testing; three-dimensional integrated circuits; 3D integrated circuit; 3D system; TSV defect; full-chip physical design; signal degradation; signal fidelity; signal recovery circuit; stand alone simulations; test/recovery structure; through silicon vias; Degradation; Delay; Flip-flops; Receivers; Resistance; Three dimensional displays; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2010 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4244-8193-4
Type :
conf
DOI :
10.1109/ICCAD.2010.5654255
Filename :
5654255
Link To Document :
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