A Complete Isothermal Model for the Lateral Insulated Gate Bipolar Transistor on SOI technology

Author

Pathirana, V. ; Napoli, E.

Author_Institution

Dept. of Eng., Univ. of Cambridge, Cambridge

fYear

2005

fDate

21-24 Nov. 2005

Firstpage

1

Lastpage

6

Abstract

While there are several analytical models dedicated to the vertical IGBT there is virtually no reliable model for the Lateral IGBT (LIGBT). LIGBTs are increasingly popular in smart power and power integrated circuits, especially in those applications where high voltage and high current capabilities are required. Silicon on insulator (SOI) could be the future technology for power devices and integrated circuits due to its much improved device isolation. In this work we report for the first time a complete analytical model for the SOI LIGBT based on semiconductor physics with very few fitting parameters. The model is assessed against finite element device simulations and experimental results.

Keywords

finite element analysis; insulated gate bipolar transistors; power MOSFET; power integrated circuits; silicon-on-insulator; SOI technology; finite element device simulations; isothermal model; lateral insulated gate bipolar transistor; power integrated circuits; semiconductor physics; silicon-on-insulator; smart power; Analytical models; Insulated gate bipolar transistors; Integrated circuit reliability; Integrated circuit technology; Isolation technology; Isothermal processes; Physics; Power integrated circuits; Silicon on insulator technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2005 2005 IEEE Region 10

Conference_Location

Melbourne, Qld.

Print_ISBN

0-7803-9311-2

Electronic_ISBN

0-7803-9312-0

Type

conf

DOI

10.1109/TENCON.2005.301150

Filename

4085018