Title :
Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer
Author :
Shoji, H. ; Nakata, Y. ; Mukai, K. ; Sugiyama, Y. ; Sugawara, M. ; Yokoyama, N. ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband have been observed with an increasing number of quantum dot layer and with decreasing cavity loss.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; laser cavity resonators; optical losses; quantum well lasers; semiconductor quantum dots; InGaAs; cavity loss; fabrication; lower-order subband; multi-stacked dot layer; quantum dot layer; room temperature lasing; self-formed InGaAs quantum dot lasers; Electroluminescence; Indium gallium arsenide; Laser modes; Laser theory; Pulse measurements; Quantum dot lasers; Quantum dots; Stationary state; Temperature; US Department of Transportation;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553739
