DocumentCode :
3378931
Title :
In situ screening techniques for defective oxides in devices for automotive applications
Author :
Malandruccolo, V. ; Ciappa, M. ; Fichtner, W. ; Rothleitner, H.
Author_Institution :
Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland
fYear :
2011
fDate :
10-14 April 2011
Abstract :
Efficient screening procedures for the control of the defectivity are vital to limit early failures especially in critical automotive applications. Traditional strategies based on burn-in and in-line tests are able to provide the required level of reliability but they are expensive and time consuming. This paper presents novel built-in circuitries to screen out oxide defects in integrated circuits for the most important building blocks used in automotive applications. The proposed techniques are based on an embedded circuitry that includes control logic, high voltage generation, and leakage current monitoring. The concept and advantages of the proposed screening procedure are described in very detail and demonstrated experimentally in conjunction with the integration of test-chips.
Keywords :
automotive electronics; built-in self test; integrated circuit reliability; integrated circuit testing; automotive application; built-in circuitry; burn-in test; control logic; embedded circuitry; in situ screening technique; in-line test; integrated circuit oxide defect; leakage current monitoring; reliability; Capacitors; Current measurement; Leakage current; Logic gates; Performance evaluation; Reliability; Stress; Built-In Reliability; Burn-In; Capacitor Reliability; Gate Oxide Reliability; STI Defects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2011.5784447
Filename :
5784447
Link To Document :
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