DocumentCode :
3379001
Title :
Post-placement STI well width adjusting by geometric programming for device mobility enhancement in critical path
Author :
Li, Jing ; Yang, Bo ; Dong, Qing ; Nakatake, Shigetoshi
Author_Institution :
Dept. of Inf. & Media Sci., Univ. of Kitakyushu, Kitakyushu, Japan
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
929
Lastpage :
932
Abstract :
Size of STI wells is another significant factor to affect the stress magnitude (device mobility) besides size of transistor active regions. In this paper, we present a technique for improving device mobility in the critical path via global STI well width adjusting following the chip placement stage. The methodology formulates the original device mobility enhancement problem as a series of convex geometric programs(GP), which is based on two observations that: (1)Minimum layout perturbation objective could be reached when introducing into an iterative GP approximation procedure; (2)Terms in charge of PMOS channel mobility optimization could be modeled as posynomials of design variables, that is, the width of STI wells. Finally, by applying the presented technique to several IBM-PLACE benchmarks, and solving the resulted GP problems by a GP solver named MOSEK, we are able to demonstrate its effectiveness.
Keywords :
MOSFET; circuit optimisation; convex programming; geometric programming; IBM-PLACE benchmark technique; MOSEK; PMOS channel mobility optimization; convex geometric programming; critical path; device mobility enhancement problem; iterative GP approximation procedure; minimum layout perturbation; post-placement STI well width; posynomial design; shallow trench isolation stress; stress magnitude; transistor active regions; Circuits; Compressive stress; Constraint optimization; Design optimization; Etching; Iterative methods; MOS devices; Nanoscale devices; Silicon; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537398
Filename :
5537398
Link To Document :
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