Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies

Author

Kim, Jae-Joon ; Linder, Barry P. ; Rao, Rahul M. ; Kim, Tae-Hyoung ; Lu, Pong-Fei ; Jenkins, Keith A. ; Kim, Chris H. ; Bansal, Aditya ; Mukhopadhyay, Saibal ; Chuang, Ching-Te

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2011

fDate

10-14 April 2011

Abstract

Ring oscillator (RO) structures that separate NBTI and PBTI effects are implemented in a high-k metal gate technology. The measurement results clearly show significant RO frequency degradation from PBTI as well as NBTI. For comparison, RO structures with the same principle are also implemented in a SiO₂/poly-gate technology, where PBTI is negligible. Experimental results show noticeable frequency degradation under NBTI-only stress mode but negligible degradation under PBTI-only mode, which illustrates the validity of the proposed principle and structures.

Keywords

high-k dielectric thin films; oscillators; semiconductor device reliability; silicon compounds; NBTI measurement; PBTI measurement; RO frequency degradation; SiO₂; high-k metal gate technology; negative bias temperature instability; poly-gate technology; positive bias temperature instability; reliability; ring oscillator structures; Degradation; Frequency measurement; High K dielectric materials; Logic gates; Ring oscillators; Stress; Temperature measurement; Circuit; NBTI; PBTI; Ring Oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784450

Filename

5784450