Title :
Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies
Author :
Kim, Jae-Joon ; Linder, Barry P. ; Rao, Rahul M. ; Kim, Tae-Hyoung ; Lu, Pong-Fei ; Jenkins, Keith A. ; Kim, Chris H. ; Bansal, Aditya ; Mukhopadhyay, Saibal ; Chuang, Ching-Te
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Ring oscillator (RO) structures that separate NBTI and PBTI effects are implemented in a high-k metal gate technology. The measurement results clearly show significant RO frequency degradation from PBTI as well as NBTI. For comparison, RO structures with the same principle are also implemented in a SiO2/poly-gate technology, where PBTI is negligible. Experimental results show noticeable frequency degradation under NBTI-only stress mode but negligible degradation under PBTI-only mode, which illustrates the validity of the proposed principle and structures.
Keywords :
high-k dielectric thin films; oscillators; semiconductor device reliability; silicon compounds; NBTI measurement; PBTI measurement; RO frequency degradation; SiO2; high-k metal gate technology; negative bias temperature instability; poly-gate technology; positive bias temperature instability; reliability; ring oscillator structures; Degradation; Frequency measurement; High K dielectric materials; Logic gates; Ring oscillators; Stress; Temperature measurement; Circuit; NBTI; PBTI; Ring Oscillator;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784450
