DocumentCode :
3379029
Title :
Band structure calculation for quantum dot solar cells using k.p method
Author :
Dahal, Som N. ; Bremner, Stephen P. ; Honsberg, Christiana B.
Author_Institution :
Department of Physics and Astronomy, University of Delaware, Newark, 19716, USA
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
Quantum dot hetero structures are possible candidate materials for high efficiency solar cells using advanced approaches such as intermediate bands. Lattice mismatch in the epitaxial growth of quantum dot (QD) causes strain in the structure. Here we report the use of the k.p method to calculate the band structure including the effects of strain, and light and heavy holes. With the modified band gaps due to strain, a material search is performed among III-V binaries and ternaries for a high efficiency QD solar cell material with negligible valence band offsets. It is found that the condition of negligible valence band offsets severely limits the choice of materials. The closest to ideal barrier/dot material system found is Al0.57In0.43As/InP0.87Sb0.13 corresponding to an efficiency of 58% under x1000 solar concentration for AM 1.5 spectrum.
Keywords :
Capacitive sensors; III-V semiconductor materials; Lattices; Nanostructured materials; Photonic band gap; Photovoltaic cells; Quantum computing; Quantum dots; Shape; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922605
Filename :
4922605
Link To Document :
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