Title :
Negative bias temperature instability “multi-mode” compact model based on threshold voltage and mobility degradation
Author :
Varghese, D. ; Higgins, R. ; Dunn, S. ; Krishnan, A.T. ; Reddy, V. ; Krishnan, S.
Author_Institution :
Analog Technol. Dev., Texas Instrum., Dallas, TX, USA
Abstract :
In this paper we have developed a model to obtain drain current (ID) degradation at all transistor operating modes (linear, saturation and sub-threshold) during NBTI stress based on threshold voltage (VT) and mobility (μ) degradation. This model provides a compact way to comprehend NBTI induced drain current degradation for transistors subject to multiple operating modes (e.g., dynamic voltage scaling, active/standby modes).
Keywords :
CMOS integrated circuits; MOSFET; semiconductor device models; CMOS transistors; NBTI stress; drain current degradation; mobility degradation; multimode compact model; negative bias temperature instability; threshold voltage; Current measurement; Degradation; Logic gates; MOSFETs; Stress; Stress measurement; Negative bias temperature instability; compact model; mobility degradation; threshold-voltage degradation;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784451
