Title :
A new smart device array structure for statistical investigations of BTI degradation and recovery
Author :
Schlünder, C. ; Berthold, J.M. ; Hoffmann, M. ; Weigmann, J.-M. ; Gustin, W. ; Reisinger, H.
Author_Institution :
Corp. Reliability Dept., Infineon Technol. AG, Neubiberg, Germany
Abstract :
The paper presents the development of new universal smart test-structure solving the typical restrictions of BTI device array investigations. Our integrated structure combined with an adapted measurement methodology ensures very short and most notably uniform recovery times for each device of the entire array. This is the absolutely required precondition for statistical evaluations of the BTI degradation and recovery behavior. Our new smart device array structure approach enables us to investigate the statistic of the parameter degradations itself and the combination of the variability of virgin devices at zero hour together with the additional variations due the non-uniform behavior of BTI degradation.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit testing; statistical analysis; BTI degradation; BTI device array; CMOS technology; smart device array structure; statistical evaluations; universal smart test-structure; Arrays; Decoding; Degradation; Delay; Force; Stress; Transistors;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784452