• DocumentCode
    3379043
  • Title

    Ultra-low transparency current density of strained quantum well lasers by coupling with n-type /spl delta/-doped layer

  • Author

    Buchinsky, O. ; Blumin, M. ; Sarfaty, R. ; Fekete, D.

  • Author_Institution
    Dept. of Phys., Technion-Israel Inst. of Technol., Haifa, Israel
  • fYear
    1996
  • fDate
    13-18 Oct. 1996
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped active area.
  • Keywords
    current density; optical losses; quantum well lasers; semiconductor doping; transparency; AlGaAs-InGaAs; coupling; internal losses; n-type /spl delta/-doped layer; single strained quantum well; strained quantum well lasers; ultra-low transparency current density; Current density; Doping profiles; Energy states; Optical coupling; Potential energy; Quantum well lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1996., 15th IEEE International
  • Conference_Location
    Haifa, Israel
  • Print_ISBN
    0-7803-3163-X
  • Type

    conf

  • DOI
    10.1109/ISLC.1996.553740
  • Filename
    553740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3379043