DocumentCode :
3379210
Title :
Separate-confinement vertical quantum well-lasers grown by self-ordering on V-grooved substrates
Author :
Ils, P. ; Gustafsson, A. ; Chiriotti, N. ; Kapon, E.
Author_Institution :
Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland
fYear :
1996
fDate :
13-18 Oct. 1996
Firstpage :
47
Lastpage :
48
Abstract :
We fabricated and studied separate confinement (SC) vertical quantum well (VQW) AlGaAs lasers formed by self-ordering on V-grooved substrates. Quantum confinement in the vertical quantum well is evidenced by the TM polarized output.
Keywords :
III-V semiconductors; aluminium compounds; cathodoluminescence; electroluminescence; gallium arsenide; light polarisation; quantum well lasers; semiconductor growth; AlGaAs; AlGaAs lasers; TM polarized output; V-grooved substrates; VQW; quantum confinement; self-ordering; separate-confinement vertical quantum well-lasers; Epitaxial growth; Laser theory; Optical waveguides; Polarization; Potential well; Protons; Quantum well lasers; Substrates; Temperature; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
Type :
conf
DOI :
10.1109/ISLC.1996.553741
Filename :
553741
Link To Document :
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