Title :
Low-energy UV effects on Organic Thin-Film-Transistors
Author :
Wrachien, N. ; Cester, A. ; Bari, D. ; Meneghesso, G. ; Kovac, J. ; Jakabovic, J. ; Sokolsky, M. ; Donoval, D. ; Cirak, J.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
Abstract :
We subjected Organic Thin-Film-Transistors with different gate dielectrics interface treatment to visible light and low energy UV irradiation. Devices with silicon nanoparticles only feature a remarkable temporary charge trapping, regardless the irradiation wavelength. On the contrary, devices without silicon nanoparticles feature temporary trapped charge under visible light, and permanent mobility degradation if they are irradiated with a wavelength shorter than 420 nm.
Keywords :
elemental semiconductors; nanoparticles; organic field effect transistors; thin film transistors; ultraviolet radiation effects; charge trapping; gate dielectrics interface treatment; irradiation wavelength; low energy UV irradiation; low-energy UV effects; mobility degradation; organic thin-film-transistors; silicon nanoparticles; visible light; Degradation; Pentacene; Performance evaluation; Radiation effects; Semiconductor device measurement; Silicon; Thin film transistors; Irradiation; Organic Semiconductors; Reliability; Silicon nanoparticles; Thin-Film-Transistors;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784462