A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests

Author

Liu, T. ; Wagner, S. ; Sturm, J.C.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA

fYear

2011

fDate

10-14 April 2011

Abstract

We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ~10⁴ when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.

Keywords

LED displays; driver circuits; elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; AMOLED display; DC saturation current; Si; a-Si TFT; accelerated tests; active-matrix organic light emitting diode; amorphous-silicon thin-film transistor; analog drivers; lifetime prediction; Degradation; Life estimation; Logic gates; Stress; Temperature; Thin film transistors; Threshold voltage; Accelerated lifetime tests; a-Si TFTs; current degradation; stability; stretched hyperbola;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784463

Filename

5784463