Title :
Statistics of breakdown field and time-dependent dielectric breakdown in contact-to-poly modules
Author :
Yokogawa, Shinji ; Uno, Satoshi ; Kato, Ichiro ; Tsuchiya, Hideaki ; Shimizu, Tatsuo ; Sakamoto, Mitsuhiro
Author_Institution :
Adv. Device Dev. Dept., Renesas Electron. Corp., Sagamihara, Japan
Abstract :
In this paper, we present the results of voltage-ramp dielectric breakdown and time-dependent dielectric breakdown experiments for contact-polysilicon control gate intra-level dielectric stacks. Lifetime distribution and area scaling are discussed statistically with the analysis of global and local space deviations using the electrical method. Optimized process reliability is evaluated by performing a SRAM lifetime test that measures the early life failure rate.
Keywords :
SRAM chips; electric breakdown; elemental semiconductors; integrated circuit reliability; integrated circuit testing; silicon; statistical analysis; SRAM lifetime test; Si; area scaling; contact-polysilicon control gate intra-level dielectric stacks; electrical method; life failure rate; lifetime distribution; optimized process reliability; space deviations; statistical analysis; time-dependent dielectric breakdown; voltage-ramp dielectric breakdown; Copper; Dielectric breakdown; Electric fields; Lithography; Logic gates; Reliability; Area scaling; CA/PC; ELFR; Global deviation; Local deviation; TDDB; VRDB;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784468
