Experimental analysis of characteristic temperature in quantum-well semiconductor lasers

Author

Higashi, T. ; Yamamoto, T. ; Kubota, S. ; Ogita, S.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

49

Lastpage

50

Abstract

Temperature dependence of the gain characteristics in a 1.31-/spl mu/m GaInAsP/InP quantum-well laser was measured and compared with that in a 0.98 /spl mu/m GaInAs/GaAs laser. It was found that the low characteristic temperature T/sub 0/ in the 1.31-/spl mu/m laser was determined by the temperature dependence of the transparent current density J/sub tr/.

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; transparency; 0.98 /spl mu/m GaInAs/GaAs laser; 0.98 mum; 1.31 mum; 1.31-/spl mu/m GaInAsP/InP quantum-well laser; GaInAs-GaAs; GaInAsP-InP; characteristic temperature; gain characteristics; quantum-well semiconductor lasers; temperature dependence; transparent current density; Current density; Equations; Gain measurement; Gallium arsenide; Indium phosphide; Loss measurement; Quantum well lasers; Semiconductor lasers; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553742

Filename

553742