DocumentCode :
3379491
Title :
Indium tin oxide transparent electrodes for vertical-cavity surfaceemitting lasers fabricated with use of a single lithography step
Author :
Chua, C.L. ; Thornton, R.L. ; Treat, D.W. ; Yang, V.K. ; Dunnrowicz, C.C.
Author_Institution :
Xerox Palo Alto Research Center
Volume :
11
fYear :
1997
fDate :
18-23 May 1997
Firstpage :
196
Lastpage :
197
Keywords :
Annealing; Carrier confinement; Conductivity; Contact resistance; Electrodes; Electrons; Gallium arsenide; Indium tin oxide; Optical devices; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
Type :
conf
DOI :
10.1109/CLEO.1997.602460
Filename :
602460
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3379491
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