Title :
Advanced bipolar technology for the 1990s
Author :
Sun, J.Y.-C. ; Comfort, J.H. ; Warnock, J. ; Cressler, J.D. ; Patton, G. ; Stork, J.M.C. ; Burghartz, J. ; Harame, D. ; Crabbe, E. ; Lu, P.F. ; Arienzo, M. ; Meyerson, B.
Author_Institution :
IBM Res. Div., Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The advent of low temperature epitaxy processes provides a new degree of freedom for bipolar device scaling. This paper describes new vertical scaling concepts and process technology elements required for advanced scaled bipolar (NPN and PNP) devices which will be the core of high-performance application-specific bipolar, BiCMOS, or complementary bipolar/BiCMOS logic and memory chips. In particular, the authors address key issues such as transit time reduction by SiGe base band-gap engineering, junction field/capacitance control by using lightly-doped emitter (LDE) and collector (LDC) concepts, lateral scaling (reduction of parasitic R and C) by advanced self-aligned structures and trench isolations, and liquid-nitrogen temperature (LNT) operation. Challenges for future BiCMOS and complementary bipolar/BiCMOS process technologies are examined
Keywords :
BiCMOS integrated circuits; application specific integrated circuits; bipolar integrated circuits; integrated circuit technology; integrated logic circuits; integrated memory circuits; BiCMOS; application-specific bipolar; band-gap engineering; bipolar device scaling; complementary bipolar/BiCMOS logic; junction field/capacitance control; lateral scaling; lightly doped collector; lightly-doped emitter; liquid-nitrogen temperature; low temperature epitaxy processes; process technology elements; self-aligned structures; transit time reduction; trench isolations; vertical scaling concepts; BiCMOS integrated circuits; Epitaxial growth; Germanium silicon alloys; Isolation technology; Lighting control; Logic devices; Parasitic capacitance; Photonic band gap; Silicon germanium; Temperature control;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246667
