DocumentCode :
3379566
Title :
Low-dropout voltage reference: An approach to buffered architectures with low sensitivity
Author :
Aminzadeh, Hamed ; Lotfi, Reza ; Mafinezhad, Khalil
Author_Institution :
Dept. of Electr. Eng., Ferdowsi Univ. of Mashhad, Mashhad, Iran
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
849
Lastpage :
852
Abstract :
A modified circuit topology for bandgap references capable of providing very high load current with output which has small sensitivity against temperature variations is presented. Employing a proportional-to-absolute-temperature (PTAT) current source and a complementary-to-absolute-temperature (CTAT) voltage source in a novel closed-loop configuration, the output voltage can be tuned over a wide range of voltages lower or higher than Silicon bandgap voltage of 1.2 V. These features make the configuration a promising competitor for low-dropout regulators. Low-power and low-voltage design considerations of the circuit offering many advantages are addressed. With different specifications, two design examples in 0.18-yKm standard CMOS technology are reported. Thanks to a modified amplifier topology, the 0.9 V and 1.3 V bandgap references have fast stable operation for the load currents ranging from 0 mA to 100 mA with load capacitors as low as 10 pF and no equivalent series resistance (ESR). Simulated values of the temperature coefficient for both design cases are smaller than 37ppm/°C.
Keywords :
CMOS integrated circuits; buffer circuits; low-power electronics; reference circuits; sensitivity analysis; voltage regulators; buffered architectures; complementary-to-absolute-temperature voltage source; current 0 mA to 100 mA; equivalent series resistance; low-dropout regulators; low-dropout voltage reference; low-power design; low-voltage design; modified amplifier topology; modified circuit topology; proportional-to-absolute-temperature current source; silicon bandgap voltage; standard CMOS technology; temperature coefficient; temperature variations; voltage 0.9 V; voltage 1.2 V; voltage 1.3 V; CMOS technology; Capacitors; Circuit topology; Operational amplifiers; Paramagnetic resonance; Photonic band gap; Regulators; Silicon; Temperature sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537428
Filename :
5537428
Link To Document :
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