• DocumentCode
    3379594
  • Title

    A new interface defect spectroscopy method

  • Author

    Ryan, J.T. ; Yu, L.C. ; Han, J.H. ; Kopanski, J.J. ; Cheung, K.P. ; Zhang, F. ; Wang, C. ; Campbell, J.P. ; Suehle, J.S. ; Tilak, V. ; Fronheiser, J.

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • fYear
    2011
  • fDate
    10-14 April 2011
  • Abstract
    A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.
  • Keywords
    defect states; interface states; semiconductor devices; spectroscopy; Si-SiO2; interface defect spectroscopy method; material system; production quality submicron device; variable height charge pumping; Charge pumps; Current measurement; Filling; Frequency measurement; Interface states; Lead; Silicon; Pb centers; charge pumping; interface states;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2011 IEEE International
  • Conference_Location
    Monterey, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-9113-1
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2011.5784477
  • Filename
    5784477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3379594