Title :
A new interface defect spectroscopy method
Author :
Ryan, J.T. ; Yu, L.C. ; Han, J.H. ; Kopanski, J.J. ; Cheung, K.P. ; Zhang, F. ; Wang, C. ; Campbell, J.P. ; Suehle, J.S. ; Tilak, V. ; Fronheiser, J.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.
Keywords :
defect states; interface states; semiconductor devices; spectroscopy; Si-SiO2; interface defect spectroscopy method; material system; production quality submicron device; variable height charge pumping; Charge pumps; Current measurement; Filling; Frequency measurement; Interface states; Lead; Silicon; Pb centers; charge pumping; interface states;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784477
