DocumentCode :
3379596
Title :
The differential efficiency of quantum well lasers
Author :
Smowton, P.M. ; Blood, P.
Author_Institution :
Dept. of Phys. Astron., Univ. of Wales Coll. of Cardiff, UK
fYear :
1996
fDate :
13-18 Oct. 1996
Firstpage :
51
Lastpage :
52
Abstract :
Using experimental measurements of spontaneous emission spectra, we have identified the components which determine the external differential injection efficiency of laser diodes. We have shown that, even though the emission from the n=l transition pins at threshold, there are contributions to /spl eta//sub o//sup d/ above threshold from both the stripe efficiency /spl eta//sub s//sup d/ and the injection efficiency /spl eta//sub i//sup d/, the latter being due to the absence of pinning outside the well.
Keywords :
Fermi level; quantum well lasers; spontaneous emission; AlGaInP; GaInP; differential efficiency; external differential injection efficiency; injection efficiency; laser diodes; quantum well lasers; spontaneous emission spectra; stripe efficiency; threshold; Blood; Extraterrestrial measurements; Gain measurement; Laser theory; Pins; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
Type :
conf
DOI :
10.1109/ISLC.1996.553743
Filename :
553743
Link To Document :
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