Highly Ordered Nanostructures for Ultra-Sensitive SERS

Author

Agarwal, A. ; Fang, C. ; Buddharaju, K.D. ; Balasubramanian, N. ; Kwong, D.L. ; Khalid, N. Md ; Salim, S.M. ; Widjaja, E. ; Garland, M.

Author_Institution

Inst. of Microelectron., Singapore

fYear

2007

fDate

10-14 June 2007

Firstpage

1923

Lastpage

1926

Abstract

CMOS compatible silicon technologies are used to fabricate schematically arranged arrays of nanostructures for Surface Enhanced Raman Spectroscopy (SERS), incorporating processes like DUV photolithography, reactive ion etching and physical vapour deposition of silver and gold. The surface treatment of cuvette and tubes used to handle Rhodamine 6G (R6G) and the substrate pre-treatment procedures, being significant for concentration less than 10^-9 M, are elaborated. The Raman signal is also enhanced by the addition of sodium chloride to R6G and by optimizing the sample immersion time in the analytes. 10^-10 and 10^-12 M R6G with 1 mM sodium chloride is detected on silver and gold terminated SERS substrates respectively.

Keywords

Raman spectroscopy; nanostructured materials; surface enhanced Raman scattering; CMOS compatible silicon technology; Raman signal; Rhodamine 6G; cuvette; nanostructures; surface enhanced Raman spectroscopy; surface treatment; tubes; CMOS process; CMOS technology; Gold; Lithography; Nanostructures; Raman scattering; Silicon; Silver; Spectroscopy; Surface treatment; Nanostructures; Ordered; R6G; Surface Enhanced Raman Spectroscopy (SERS);

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300535

Filename

4300535