DocumentCode :
3379693
Title :
A novel method to characterize and screen mobile ion contaminated nonvolatile memory products
Author :
Shone, F. ; Liou, H. ; Pan, C. ; Woo, B. ; Holler, M.
Author_Institution :
Memory Dept., Macronix Int. Co., Hsinchu, Taiwan
fYear :
1991
fDate :
22-24 May 1991
Firstpage :
224
Lastpage :
226
Abstract :
Charge retention in EPROM single cell and memory arrays due to mobile ions has been extensively characterized. Through the study, it is realized that the impact of the contamination to the EPROM product lifetime can be seriously underestimated. By `selectively´ programming cells in the array and subjecting the parts to a bake, the contaminated parts can be much more reliably screened. Moreover, through the different amount of charge loss of programmed cells with different space apart, not only the amount of contamination can be quantified but also the diffusion coefficient and activation energy of mobile ions in the related thin film can also be derived
Keywords :
EPROM; integrated circuit testing; integrated memory circuits; life testing; production testing; EPROM single cell; activation energy; bake; charge loss; charge retention; diffusion coefficient; memory arrays; mobile ion contaminated nonvolatile memory products; product lifetime; programmed cells; Contamination; Dielectric losses; Dielectric thin films; EPROM; Gettering; Nonvolatile memory; Packaging; Space charge; Space technology; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
ISSN :
1524-766X
Print_ISBN :
0-7803-0036-X
Type :
conf
DOI :
10.1109/VTSA.1991.246677
Filename :
246677
Link To Document :
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