Title :
Preparation of piezoelectric ZnO films by target facing type of sputtering method
Author :
Hashimoto, Ken-Ya ; Ogawa, Shotaro ; Nonoguchi, Akinori ; Omori, Tatsuya ; Yamaguchi, Masatsune
Author_Institution :
Dept. of Electron. & Mech. Eng., Chiba Univ., Japan
Abstract :
This paper describes the preparation of piezoelectric ZnO films by target facing type of sputtering (TFTS) method. The method enables to generate high density plasma under a low gas pressure of the order of 10 -3-10-4 Torr. The film is grown by reactive sputtering of metal Zn target in the ambient gas of pure O2. Although the high density plasma is basically generated by DC power source, a spark killer is successfully employed to stabilise glow discharge and enables to deposit ZnO films under a low gas pressure. The effects of the sputtering conditions on the ZnO films are discussed in detail, and it is shown how the DC-TFTS method is effective in the preparation of high-quality ZnO films by applying them to surface acoustic wave devices operating in VHF and UHF ranges
Keywords :
II-VI semiconductors; piezoelectric semiconductors; piezoelectric thin films; plasma deposition; sputter deposition; surface acoustic wave devices; zinc compounds; DC power source; DC-TFTS method; O2; UHF range; VHF range; ZnO; ambient gas; glow discharge; high density plasma; low gas pressure; metal Zn target; piezoelectric ZnO films; preparation; pure O2; reactive sputtering; spark killer; sputtering conditions; sputtering method; surface acoustic wave devices; target facing type; DC generators; Glow discharges; Piezoelectric films; Plasma density; Plasma sources; Power generation; Sparks; Sputtering; Surface acoustic wave devices; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
Print_ISBN :
0-7803-4095-7
DOI :
10.1109/ULTSYM.1998.762130
