DocumentCode :
3379804
Title :
Determination of MOSFET´s channel doping profile right up to SiO 2/Si interface
Author :
Lin, Pole-Shang ; Wang, Chih-Hsien
Author_Institution :
ERSO/ITRI, Hsinchu, Taiwan
fYear :
1991
fDate :
22-24 May 1991
Firstpage :
201
Lastpage :
204
Abstract :
The threshold-voltage fitting method is proposed to determine the channel doping profile of both n-channel and counter-implantation p-channel MOSFET´s. The doping profile in the region near SiO2/Si interface, of depth less than the extrinsic Debye length, can be determined. The accuracy of the developed method has been tested through both the numerical simulation results and the experimental data. Quite good agreement has been obtained
Keywords :
doping profiles; insulated gate field effect transistors; semiconductor device models; semiconductor process modelling; PETS software; SiO2-Si interface; channel doping profile; counter-implantation p-channel; n-channel; nMOSFET; numerical simulation; pMOSFET; profile extractor and threshold simulator; threshold-voltage fitting method; Analytical models; Capacitance-voltage characteristics; Data mining; Doping profiles; Industrial electronics; MOSFET circuits; Positron emission tomography; Surface fitting; Testing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
ISSN :
1524-766X
Print_ISBN :
0-7803-0036-X
Type :
conf
DOI :
10.1109/VTSA.1991.246682
Filename :
246682
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3379804
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