Title :
1 mA-threshold operation of 1.3 μm tensile-strained GaInAsP/InP MQW lasers
Author :
Yokouchi, N. ; Yamanaka, N. ; Iwai, N. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
Threshold current of 1.3 μm tensile-strained GaInAsP/InP multiple quantum well (MQW) lasers is investigated. The device has strain-compensated MQW as an active region which consists of -1.15% tensile-strained well and 0.35% compressive-strained barrier. The lowest threshold current of 1.0 mA was obtained in a triple quantum well (3 QW) laser with 120 μm-long cavity and high reflective coatings. High temperature operation is also investigated, and the maximum operating temperature Tmax is 120°C for a 3 QW laser and 150°C for a 5 QW laser
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical films; optical transmitters; quantum well lasers; reflectivity; μm tensile-strained; μm-long cavity; 1 mA; 1.3 mum; 120 C; 120 mum; 150 C; GaInAsP-InP; GaInAsP/InP MQW lasers; QW laser; active region; compressive-strained barrier; high reflective coatings; high temperature operation; lowest threshold current; mA-threshold operation; maximum operating temperature; strain-compensated MQW; tensile-strained well; threshold current; triple quantum well; Coatings; Fiber lasers; Indium phosphide; Lattices; Optical interconnections; Quantum well devices; Quantum well lasers; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492264
