Study of Electrothermal Stress Effect on RF Performance of InGaP/GaAs Heterojunction Bipolar Transistor-Based Low-Noise Amplifier

Author

Liu, Xiang ; Yuan, Jiann-shiun ; Liou, Juin J.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL

fYear

2008

fDate

12-15 Oct. 2008

Firstpage

1

Lastpage

4

Abstract

This paper investigates the electrothermal stress- induced performance degradation of a cascode low-noise amplifier (LNA) built using InGaP/GaAs heterojunction bipolar transistors (HBTs). Changes in device characteristics due to the electrothermal stress were examined experimentally. At the moderate base-emitter voltage, the base current increases and current gain decreases after stress. The SPICE Gummel-Poon (SGP) model parameters were extracted before and after stress and measured device data were used in the Cadence SpectreRF simulation to study the impact of electrothermal stress on the low-noise amplifier performance.

Keywords

III-V semiconductors; SPICE; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; low noise amplifiers; RF performance; SPICE Gummel-Poon model parameters; electrothermal stress effect; heterojunction bipolar transistor-based low-noise amplifier; Bipolar transistors; Degradation; Electrothermal effects; Gallium arsenide; Heterojunction bipolar transistors; Low-noise amplifiers; Radio frequency; SPICE; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-1939-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2008.15

Filename

4674470