Title :
ELO bonding of GaAs devices on diamond film SAW devices
Author :
Koh, K. ; Takabatake, N. ; Noge, S. ; Kobayashi, T. ; Arai, T. ; Hohkawa, K.
Author_Institution :
Kanagawa Inst. of Technol., Japan
Abstract :
This paper reports a basic study on the integration of diamond film with GaAs devices. We investigated the roughness of the diamond film surface by AFM and estimated the thermal conductivity of the diamond film by acoustic-optical measurement technology. We also bonded GaAs devices such as Schottky junctions and MSM diodes on the diamond film using improved epitaxial liftoff technology, in which a polyimide film is used in place of black wax. These results confirm the possibility of fabricating SAW-semiconductor functional devices on the diamond film
Keywords :
III-V semiconductors; Schottky barriers; atomic force microscopy; diamond; gallium arsenide; joining processes; metal-semiconductor-metal structures; surface acoustic wave devices; thermal conductivity; AFM; C-GaAs; MSM diodes; Schottky junctions; acoustic-optical measurement; diamond film SAW devices; epitaxial liftoff; polyimide film; surface roughness; thermal conductivity; Acoustic measurements; Bonding; Conductive films; Conductivity measurement; Gallium arsenide; Rough surfaces; Schottky diodes; Surface acoustic wave devices; Surface roughness; Thermal conductivity;
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
Print_ISBN :
0-7803-4095-7
DOI :
10.1109/ULTSYM.1998.762157
