DocumentCode
3379931
Title
An overview of charge pumping circuits for flash memory applications
Author
Wong, Oi-Ying ; Hei Wong ; Wing-Shan Tam ; Kok, Chi-Wah
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
116
Lastpage
119
Abstract
Charge pump is an indispensable component in flash memory systems in order to generate high operation voltages for programming flash memory cells. In this paper, we review some high-efficiency charge pump circuits that fulfill the stringent requirements in modern flash memory technology. The performance of these charge pump circuits will be compared in terms of voltage conversion efficiency, power efficiency, area, and process requirement. Some advanced charge pump circuits proposed recently will also be introduced.
Keywords
charge pump circuits; flash memories; charge pumping circuit; flash memory cell programming; power efficiency; process requirement; voltage conversion efficiency; Boosting; Europe; Fabrication; Ink; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157136
Filename
6157136
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