• DocumentCode
    3380014
  • Title

    Using GaN FETs for High Power RF Switches

  • Author

    Carroll, Jim M.

  • Author_Institution
    Adv. Product Center in Dallas, Space & Airborne Syst. Div., Raytheon Co., Dallas, TX
  • fYear
    2008
  • fDate
    12-15 Oct. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    GaN FET technology is facilitating the development of a new level of high power solid state switching performance. FET switches are now obtaining RF power handling levels comparable and even exceeding conventional PIN and mechanical switches up thru microwave frequencies while still offering the traditional advantages common to GaAs switches.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; gallium compounds; semiconductor switches; wide band gap semiconductors; FET switches; FET technology; GaAs; GaN; RF power handling levels; high power RF switches; high power solid state switching; Breakdown voltage; Circuit topology; Communication switching; FETs; Gallium arsenide; Gallium nitride; Radio frequency; Switches; Switching circuits; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
  • Conference_Location
    Monterey, CA
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-1939-5
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2008.22
  • Filename
    4674477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3380014