Title :
Resistance increase due to electromigration induced depletion under TSV
Author :
Frank, T. ; Chappaz, C. ; Leduc, P. ; Arnaud, L. ; Lorut, F. ; Moreau, S. ; Thuaire, A. ; El Farhane, R. ; Anghel, L.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper focuses on the EM induced voiding in a line ended by a TSV, and proposes an analytical model based on the link between the monitored electrical resistance increase and the matter depletion flow.
Keywords :
electric resistance; electromigration; three-dimensional integrated circuits; EM induced voiding; TSV; electrical resistance increase; electromigration induced depletion; matter depletion flow; through silicon via; Cathodes; Conductivity; Copper; Electromigration; Resistance; Through-silicon vias; Through Silicon Via (TSV); copper; electromigration; model; resistance trace; void;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784499
