Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs

Author

Godin, J. ; Nodjiadjim, V. ; Riet, M. ; Berdaguer, P. ; Drisse, O. ; Derouin, E. ; Konczykowska, A. ; Moulu, J. ; Dupuy, J.-Y. ; Jorge, F. ; Gentner, J.L. ; Scavennec, A. ; Johansen, T. ; Krozer, V.

Author_Institution

Alcatel Thales III-V Lab., Marcoussis

fYear

2008

fDate

12-15 Oct. 2008

Firstpage

1

Lastpage

4

Abstract

We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ges50-GHz- clock mixed-signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Various size submicron devices have been modeled using UCSD- HBT equations. These large signal models have allowed the design of 50-GHz clocked 50 G Decision and 100 G Selector circuits. The high quality of the measured characteristics demonstrates the suitability of this technology for the various applications of interest, like 100 Gbit/s transmission.

Keywords

III-V semiconductors; high-speed integrated circuits; indium compounds; integrated circuit design; integrated circuit modelling; mixed analogue-digital integrated circuits; DHBT technology; InP; UCSD-HBT equations; bit rate 100 Gbit/s; frequency 50 GHz; high-speed high-swing mixed-signal integrated circuits; Bridge circuits; Clocks; DH-HEMTs; Data conversion; Fabrication; Geometry; III-V semiconductor materials; Indium phosphide; Plugs; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-1939-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2008.28

Filename

4674483