DocumentCode :
3380171
Title :
Understanding of traps causing random telegraph noise based on experimentally extracted time constants and amplitude
Author :
Abe, Kenichi ; Teramoto, Akinobu ; Sugawa, Shigetoshi ; Ohmi, Tadahiro
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
fYear :
2011
fDate :
10-14 April 2011
Abstract :
We develop a high-speed method to extract time constants and noise amplitude of random telegraph noise (RTN). We investigate distributions of these RTN parameters for more than 270 n- and p-MOSFETs and clarify spectroscopy of traps causing RTN. Most of traps are distributed in an energy range of 220 meV, and mean times to capture/emission are measured in a wide range between 10 μs and 20 ms.
Keywords :
MOSFET; electron traps; hole traps; semiconductor device noise; MOSFET; noise amplitude; random telegraph noise; time constants; traps; Electron traps; FETs; Histograms; Logic gates; MOSFET circuits; Noise; energy distribution; random telegraph noise; time constant; trap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2011.5784503
Filename :
5784503
Link To Document :
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