DocumentCode
3380200
Title
Suppression of boron penetration in BF2+-implanted polysilicon gated p-MOSFETs with reoxidized nitrided gate oxides
Author
Lo, G.Q. ; Ting, W. ; Kwong, D.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fYear
1991
fDate
22-24 May 1991
Firstpage
104
Lastpage
108
Abstract
The authors report the use of rapid thermal reoxidized nitrided (RTN/RTO) gate oxides in BF2+-implanted polysilicon gated p-MOSFETs to achieve excellent barrier properties against the boron penetration. In addition, excellent electrical characteristics including both on- and off-states are demonstrated. Results show that thin RTN/RTO gate oxide is a promising gate dielectric for dual-poly gate CMOS technology development
Keywords
CMOS integrated circuits; VLSI; insulated gate field effect transistors; ion implantation; nitridation; oxidation; rapid thermal processing; SIO2 gate oxide; Si:BF2+; VLSI; dual-poly gate CMOS technology; electrical characteristics; ion implantation; off-states; on-states; polysilicon gated p-MOSFETs; quasistatic C-V characteristics; reoxidized nitrided gate oxides; subthreshold swing; thin RTN/RTO gate oxide; threshold voltage; Boron; CMOS technology; Capacitance-voltage characteristics; Dielectric measurements; Electric variables; MOS capacitors; MOSFET circuits; Microelectronics; Rapid thermal processing; Thermal engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-0036-X
Type
conf
DOI
10.1109/VTSA.1991.246701
Filename
246701
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