• DocumentCode
    3380230
  • Title

    A V-Band Fully-Integrated CMOS Distributed Active Transformer Power Amplifier for 802.15.TG3c Wireless Personal Area Network Applications

  • Author

    Jen, Yung-Nien ; Tsai, Jeng-Han ; Huang, Tian-Wei ; Wang, Huei

  • Author_Institution
    Dept. of Electr. Eng. & Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei
  • fYear
    2008
  • fDate
    12-15 Oct. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A 60-GHz fully-integrated and broadband distributed active transformer (DAT) power amplifier (PA) is implemented in 90-nm CMOS technology. The PA performs a flat small signal gain of 26 plusmn 1 dB from 57 to 69 GHz which covers full band for 60-GHz wireless personal network (WPAN) applications. By using the DAT output combine structure, this PA delivers 18-dBm measured output power with 12.2% PAE at 60 GHz with a compact chip size. To the best of our knowledge, this DAT CMOS PA demonstrates the highest output power among the reported 60-GHz CMOS PAs to date.
  • Keywords
    CMOS integrated circuits; impedance convertors; personal area networks; power amplifiers; wireless LAN; CMOS technology; V-band fully-integrated CMOS distributed active transformer power amplifier; bandwidth 60 GHz; size 90 nm; wireless personal area network applications; Broadband amplifiers; CMOS technology; Distributed amplifiers; Performance gain; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement; Size measurement; Wireless personal area networks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
  • Conference_Location
    Monterey, CA
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-1939-5
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2008.31
  • Filename
    4674486