MOCVD regrowth of InP on RIE patterned substrates for p-substrate 1.3 μm BH laser application

Author

Takemi, M. ; Kimura, T. ; Suzuki, D. ; Shiba, T. ; Shibata, K. ; Mihashi, Y. ; Takamiya, S. ; Aiga, M.

Author_Institution

Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

396

Lastpage

399

Abstract

We have investigated the growth behavior of sulfur-doped n-InP layers around the dry-etched mesas as a function of various H₂S flow rates. It is found that the growth rate of the n-InP layer of the sidewall of the mesa is significantly affected by the H₂S flow rate. Consequently the regrown shape of the embedding layer is found to be exactly controlled by the H₂S flow rate. Using this technique, we have fabricated a p-substrate 1.3μm BH laser with a pnp current-blocking structure around the dry-etched mesa and realized excellent lasing characteristics with high reliability for the first time

Keywords

III-V semiconductors; indium compounds; semiconductor growth; semiconductor laser arrays; sputter etching; sulphur; vapour phase epitaxial growth; 1.3 mum; H₂S; H₂S flow rates; InP MOCVD regrowth; InP:S; RIE patterned substrates; dry-etched mesas; embedding layer; growth behavior; lasing characteristics; n-InP:S layers; p-substrate BH laser application; pnp current-blocking structure; reliability; Gases; Indium phosphide; Inductors; Laser applications; MOCVD; Masers; Scanning electron microscopy; Semiconductor laser arrays; Shape control; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492266

Filename

492266